RESEARCH SEEDS
High-frequency electron devices based on compound semiconductors
![](https://semicon.tohoku.ac.jp/wp/wp-content/uploads/2022/12/img_seeds_004.jpg)
Message
Based on high electron mobility transistors using III-V and III-nitride compound semiconductors, we will pursue fundamental study and performance improvements of high-frequency devices applicable to millimeter-wave and submillimeter-wave (terahertz) bands to contribute to post-5G communication systems and a sustainable energy society.