Using SNDM, a capacitance microscopy with the world’s highest sensitivity and resolution, we will measure dopant distribution in state-of-the-art miniaturized semiconductor devices,
evaluate interface defects in next-generation wide bandgap semiconductor MOS power devices, and analyze degradation phenomena in solar cells, and so on.
These results will be utilized for clarification of the causes of performance degradation of various next-generation semiconductor devices at the atomic level and provide feedback to manufacturing processes for improvement.